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直接氮化法制备高品质氮化硅陶瓷粉体研究

Research on the Preparation of High-Quality Silicon Nitride Ceramic Powder by Direct Nitriding Method

  • 摘要: 采用直接氮化法,以硅粉为原料制备高品质氮化硅陶瓷粉体,探究了氮化温度、升温速率、硅粉粒径及稀释剂用量对粉体的影响。原料硅粉D50为275.36 nm,不添加Si3N4稀释剂,反应温度为1400 ℃时,在1100~1400 ℃升温速率控制在5 ℃/min,硅粉完全氮化,制备了粒径均匀(粒径范围在396~458 nm)类球状氮化硅材料;材料分散性好,α相质量分数高达95.02%。研究表明升温速率为控制反应进程的关键因素,当升温速率过快或者过慢时,氮化硅α相到β相的转化程度超过内部反应程度,硅粉反应不完全;添加Si3N4稀释剂能够降低氮化温度。研究结果为氮化硅陶瓷粉体工业生产工艺优化提供了技术依据。

     

    Abstract: High-quality silicon nitride ceramic powder was prepared by direct nitriding method, using silica powder as raw material, and the effects of nitriding temperature, heating rate, silica fume particle size and diluent dosage on the powder were explored. The raw silicon fume D50 was 275.36 nm, without Si3N4 diluent, when the reaction temperature was 1400 ℃, the heating rate was controlled at 5 ℃/min at 1100~1400 ℃, the silicon fume was completely nitrided, and spherical silicon nitride materials with uniform particle size (particle size range of 396~458 nm) were prepared. The material has good dispersion, and the mass fraction of the α phase is as high as 95.02%. The results showed that the heating rate was the key factor controlling the reaction process. when the heating rate was too fast or too slow, the conversion degree of silicon nitride from α phase to β phase exceeded the internal reaction degree, and the silica fume reaction was incomplete. The addition of Si3N4 diluent reduced the nitriding temperature. The research results provide a technical basis for the optimization of industrial production process of silicon nitride ceramic powder.

     

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