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李圆圆, 吴莹, 潘小强, 刘廷伟. 放电等离子烧结制备碳化硼不锈钢复合材料[J]. 粉末冶金技术, 2024, 42(4): 381-387. DOI: 10.19591/j.cnki.cn11-1974/tf.2023100003
引用本文: 李圆圆, 吴莹, 潘小强, 刘廷伟. 放电等离子烧结制备碳化硼不锈钢复合材料[J]. 粉末冶金技术, 2024, 42(4): 381-387. DOI: 10.19591/j.cnki.cn11-1974/tf.2023100003
LI Yuanyuan, WU Ying, PAN Xiaoqiang, LIU Tingwei. Preparation of boron carbide stainless steel composites by spark plasma sintering[J]. Powder Metallurgy Technology, 2024, 42(4): 381-387. DOI: 10.19591/j.cnki.cn11-1974/tf.2023100003
Citation: LI Yuanyuan, WU Ying, PAN Xiaoqiang, LIU Tingwei. Preparation of boron carbide stainless steel composites by spark plasma sintering[J]. Powder Metallurgy Technology, 2024, 42(4): 381-387. DOI: 10.19591/j.cnki.cn11-1974/tf.2023100003

放电等离子烧结制备碳化硼不锈钢复合材料

Preparation of boron carbide stainless steel composites by spark plasma sintering

  • 摘要: 以碳化硼微球、304不锈钢粉末为原料,采用放电等离子烧结方法制得碳化硼质量分数为4.00%的碳化硼-不锈钢复合材料,利用排水法对复合材料的密度进行测试,使用扫描电镜对碳化硼与不锈钢的微观结构进行分析,研究了烧结温度与压力对复合密度与微观结构的影响。结果表明:界面反应层厚度随烧结温度的增加而增加,提高烧结压力能明显降低烧结温度,抑制碳化硼与不锈钢界面反应层的生长速度。当烧结压力达到150 MPa时,在950 ℃烧结保温6 min后的复合材料相对密度能达到99.5%,界面反应层厚度低于5 μm。

     

    Abstract: The B4C-stainless steel composites with B4C mass fraction of 4.00% were prepared by spark plasma sintering (SPS) method, using B4C microspheres and 304 stainless steel powders as the raw materials. The density of the composites was tested by the drainage method, the microstructures of B4C and stainless steels were analyzed by scanning electron microscope (SEM), and the effects of sintering temperature and pressure on the density and microstructure of the composites were investigated. The results show that, the thickness of the interfacial reaction layer increases with the increase of sintering temperature. Meanwhile, increasing the sintering pressure can significantly reduce the sintering temperature, which inhibits the growth of the interfacial reaction layer between B4C and stainless steels. When the pressure reaches 150 MPa, the relative density of the composites can reach 99.5% after sintering at 950 ℃ for 6 min, and the thickness of the interfacial reaction layer is less than 5 μm.

     

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