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氧含量对氮化铝陶瓷抗弯强度及热导率的影响

Effect of Oxygen Content on Bending Strength and Thermal Conductivity of Aluminum Nitride Ceramics

  • 摘要: 氮化铝(AlN)陶瓷具有热导率高、热膨胀系数低、强度高、耐化学腐蚀等性能,是大规模集成电路理想的散热和封装材料,在半导体、大功率电子和LED照明技术等领域中有重要应用。本文以自制的不同氧含量的AlN粉末为原料制备了氮化铝陶瓷样品,采用三点弯曲法和3ω法测试陶瓷77~350K范围内的抗弯强度和热导率,研究粉末氧含量对氮化铝陶瓷的抗弯强度和热导率的影响,并比较了Al2O3陶瓷、Si3N4陶瓷和AlN陶瓷在不同温度下的力学和导热性能。结果表明,低氧含量AlN陶瓷在室温和深低温下均具有高热导率和高抗弯强度,实现了力学性能和热导率的协同调控,有着广阔的应用前景。

     

    Abstract: Aluminum nitride (AlN) ceramics exhibit high thermal conductivity, low thermal expansion coefficient, high strength, and resistance to chemical corrosion. Therefore, they are ideal materials for heat dissipation and packaging in large-scale integrated circuits, with significant applications in semiconductor technology, high-power electronics, and LED lighting and other fields. In this study, AlN ceramic samples were prepared using self-made AlN powders with varying oxygen content. The bending strength and thermal conductivity of the ceramics in the temperature range of 77 to 350 K were measured using the three-point bending method and the 3ω method. The influence of powder oxygen content on the bending strength and thermal conductivity of AlN ceramics was investigated, and the mechanical and thermal properties of Al2O3 ceramics, Si3N4 ceramics, and AlN ceramics at different temperatures were compared. The results indicate that AlN ceramics with low oxygen content exhibit high thermal conductivity and bending strength at room temperature and deep cryogenic temperatures. This study demonstrates the synergistic control of mechanical properties and thermal conductivity in AlN ceramics, highlighting their broad prospects for various applications.

     

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