高级检索

半导体用难熔金属靶材研究现状与展望

Current status and prospects of refractory metal targets for semiconductors

  • 摘要: 半导体是国家的支柱产业和战略基础,随着第三代半导体技术的发展,芯片集成电路的制造与材料供应成为制约产业发展的关键。钨、钽等难熔金属靶材是制造半导体集成电路的关键材料,通过溅射制备的各种功能薄膜已应用到电子信息产业的各个领域。我国拥有丰富的难熔金属资源和较大的产业规模,但高端靶材仍然依赖进口。近年来,国内企事业单位从原材料提纯、制备加工以及性能调控等方面持续改进和提升难熔金属靶材质量,已突破高纯原料的制备和高性能靶材的加工,在高纯钨、钨钛合金靶材、钨硅合金靶材以及高纯钽靶等领域取得了显著的进步。本文分析了近几年导体用难熔金属靶材的研究现状,介绍了国内在高纯难熔金属靶材方面的技术进展,并对未来发展提出了建议。

     

    Abstract: Semiconductors are the pillar industry and strategic foundation of a country. With the development of third-generation semiconductor technology, the manufacturing and material supply of the chip integrated circuits have become the key constraints on the industry development. Tungsten, tantalum, and other refractory metal targets are the key materials for the semiconductor integrated circuits, and the functional films prepared by sputtering have been applied in the various fields of electronic information industry. China has the abundant resources of refractory metals and huge industrial scale, but the high-value target materials still rely on imports. In recent years, the domestic enterprises have continuously improved and enhanced the raw material purification, preparation and processing, and performance control. The preparation of high-purity raw materials and the processing of high-performance targets have been achieved, and the significant progress in the fields of high-purity tungsten, tungsten titanium alloy targets, tungsten silicon alloy targets, and high-purity tantalum targets have been made. The research status of the refractory metal targets for semiconductors in recent years was analyzed in this paper, the technical progress of high purity refractory metal targets in China was introduced, and the suggestions for future development were put forward.

     

/

返回文章
返回