高级检索

单壁碳纳米管表面原位反应制备SiC的研究

The reaction mechanism of SiC synthesis on SWCNTs surface

  • 摘要: 碳纳米管增强铝基复合材料(CNTs/AMCs)具有优异的力学性能和高耐腐蚀性,在碳纳米管表面制备金属或碳化物涂层可以有效改善碳纳米管与基体界面结合状态,进而提高复合材料力学性能,在交通运输、航空航天等领域具有广阔应用前景。本文以单壁碳纳米管(SWCNTs)、纳米Si粉为原料,辛基酚聚氧乙烯醚-10(OP-10)为表面活性剂,通过原位反应在SWCNTs表面生成SiC,制备出具有“芽杆”结构的SWCNTs-SiC复合粉末。研究SWCNTs与Si摩尔比(1:1、2:1、4:1)对复合粉末物相组成、微观结构及界面特征的影响。结果表明:SWCNTs与Si粉的初始反应温度约为1040 ℃;当温度升至1250℃时,单质Si可实现完全转化,产物以β-SiC为主。在本实验工艺范围内,改性后的SWCNTs均维持了良好的结构完整性;随着原料中Si占比的升高,SiC生成量增加,但Si含量过高会导致SiC团簇的尺寸与团聚程度提高。综合评估界面改性程度与结构损伤,当SWCNTs与Si摩尔比为2:1时,所得复合粉末表现出较好的工艺平衡性,ID/IG值为0.082。基于实验结果推测,该原位反应固-固及固-气条件下进行,Si原子优先于碳管缺陷位形核,并沿111晶面族向外延堆垛生长,最终形成SiC层。本研究制备的SWCNTs-SiC复合粉末可作为CNTs/AMCs的候选界面调控结构,具有潜在的应用价值。

     

    Abstract: Carbon nanotube reinforced aluminum matrix composites (CNTs/AMCs) exhibit superior mechanical properties and high corrosion resistance. Surface modification of CNTs with metal or carbide coatings can effectively enhance interfacial bonding and the resulting mechanical performance, making these composites highly promising for aerospace and transportation applications. In this study, SWCNTs-SiC composite powders with a unique "bud-stalk" structure were synthesized via an in-situ reaction using single-walled carbon nanotubes (SWCNTs) and nano-Si powder as precursors, with octylphenol polyoxyethylene ether-10 (OP-10) as the surfactant. The influence of SWCNTs-to-Si molar ratios (1:1, 2:1, 4:1) on the phase composition, microstructure, and interfacial characteristics of the composite powders was systematically investigated. The results indicate that the initial reaction temperature is approximately 1040 °C. Complete conversion of elemental Si was achieved at 1250 °C, yielding β-SiC as the primary phase. Within the experimental range, the modified SWCNTs maintained excellent structural integrity. While increasing the Si content elevated the yield of SiC, excessive Si led to increased cluster size and severe aggregation of SiC particles. Considering both the modification degree and structural damage, the composite powder prepared at a 2:1 molar ratio exhibited an optimal balance, with an ID/IG ratio of 0.082. Based on the experimental findings, the in-situ reaction is inferred to proceed through synergistic solid-solid and gas-solid mechanisms. Si atoms preferentially nucleate at the defect sites of SWCNTs and grow via epitaxial stacking along the 111 crystal planes, eventually forming a continuous SiC layer. The synthesized SWCNTs-SiC composite powders serve as promising candidate structures for interfacial regulation in CNTs/AMCs, demonstrating significant potential for practical applications.

     

/

返回文章
返回