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钽表面(WMoCrTa)Si2高熵硅化物涂层制备及1400℃抗氧化性能研究

Preparation of (WMoCrTa)Si2 high entropy silicide coating on tantalum surface and its oxidation property at 1400 ℃

  • 摘要: 以硅化物粉末为原料,采用料浆烧结+卤化物活化包埋渗硅两步法在钽金属表面制备了(WMoCrTa)Si2高熵硅化物涂层。最终形成的涂层呈现四层结构,由外至内依次为多孔高熵硅化物相层、铬钽硅化物层、致密TaSi2层及Ta5Si3过渡层,总厚度约186 μm。在1400 ℃静态氧化环境中,该涂层可作为有效防护屏障为钽基体提供超过14 h的高温保护,其氧化增重曲线呈现“缓慢增长-快速增重-趋于稳定”三阶段特征。氧化初期,涂层表面快速形成致密SiO2保护膜,Cr元素优先与氧反应生成Cr2O3,进而与Ta2O5反应形成CrTaO4,二者协同作用显著提升氧化膜的结构稳定性与阻氧能力;氧化后期,受SiO2膜剥落、内部孔洞增多等缺陷影响,涂层保护效果逐渐变差。

     

    Abstract: (WMoCrTa)Si2 coating was prepared through a two-step process involving slurry sintering followed by halide-activated pack cementation, with silicide powders as the raw materials. Four layers comprise the final coating: a porous high-entropy silicide layer, a chromium-tantalum silicide layer, a TaSi2 interlayer, and an innermost Ta5Si3 layer with an overall thickness of 186 μm. Under static air oxidation at 1400 ℃, the coating can protect the Ta substrate for over 14 h, with its mass gain curve showing a three-stage behavior (slow growth, rapid gain, gradual stabilization). In the initial stage, a dense SiO2 scale formed rapidly; Cr preferentially was oxidized to Cr2O3, which further reacted with Ta2O5 to form CrTaO4, and their synergy enhanced the coating’s stability and oxygen-blocking ability. The coating’s protective performance finally degraded due to SiO2 spallation and internal pore proliferation.

     

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