SiC陶瓷的反应合成及Ni添加剂对其合成温度的影响

基金项目:

航空基础科学基金和中国国家自然科学基金的资助批准号(批准号No.59881001)

详细信息

REACTION SYNTHESIS AND EFFECT OF ADDITIVE Ni ON THE SYNTHESIS TEMPERATURE OF SiC CERAMIC

1. Department of Materials Science & Engineering, Beijing Univeraity of Aeronaustics & Astronsutics, Beijing 100083;
2. Chenzhou Industrial School of Hunan Province, Chenzhou 423000

摘要: 利用Si和C粉末的自蔓延高温合成反应合成SiC陶瓷,研究合成温度对反应产物形貌和组成以及Ni添加剂对合成温度的影响。试验结果表明SiC陶瓷的最低合成温度在1500℃~1600℃之间,添加适量的Ni粉后,可以有效地降低SiC的合成温度。
- SiC陶瓷 /
- 添加剂 /
- 合成温度
Abstract: Si and C powders are used to synthesize SiC ceramic by SHS (Self-propagating High-temperature Synthesis) Process. Not only the influence of synthesis temperature on the morphology and constituent of the resultant, but also the effect of additive Ni on the Synthesis temperature have been studied in this paper. The results show that the synthesis temperature of the SiC ceramic is between 15000℃ and 1600℃, and the synthesis temperature can ha obviously decreased by adding Ni powder as an additive into the reactant.
- SiC ceramic /
- additive /
- synthesis temperature