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MAO Jiali, LIU Wei, LIU Xinli, WANG Dezhi. Preparation and oxidation resistance at 1400 ℃ of (WMoCrTa)Si2 high entropy silicide coatings on tantalum surfaceJ. Powder Metallurgy Technology. DOI: 10.19591/j.cnki.cn11-1974/tf.2026020006
Citation: MAO Jiali, LIU Wei, LIU Xinli, WANG Dezhi. Preparation and oxidation resistance at 1400 ℃ of (WMoCrTa)Si2 high entropy silicide coatings on tantalum surfaceJ. Powder Metallurgy Technology. DOI: 10.19591/j.cnki.cn11-1974/tf.2026020006

Preparation and oxidation resistance at 1400 ℃ of (WMoCrTa)Si2 high entropy silicide coatings on tantalum surface

  • The (WMoCrTa)Si2 coatings were prepared by two-step process, involving slurry sintering followed by halide-activated pack cementation, with the silicide powders as the raw materials. The oxidation resistance at 1400 ℃ of the coatings on tantalum surface was investigated. In the results, the four-layer structure is present in the final coatings: the porous high-entropy silicide layers, the chromium-tantalum silicide layers, the TaSi2 interlayers, and the innermost Ta5Si3 layers with the overall thickness of 186 μm. Under the static air oxidation at 1400 ℃, the coatings can protect the tantalum substrate for over 14 h, with the mass gain curves showing a three-stage behavior as slow growth, rapid gain, and gradual stabilization. In the initial stage, the dense SiO2 scale is formed rapidly, Cr is preferentially oxidized to Cr2O3, which further reacts with Ta2O5 to form CrTaO4, and the synergy enhances the stability and oxygen-blocking ability of the coatings. In the later stages of oxidation, the protective performance of the coatings finally deteriorates due to the SiO2 spallation and the internal pore proliferation.
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