INVESTIGATION OF SINTERING PROCESS OF SILICON-TITANIUM-BORON DOPED DIAMOND

The reactions during sintering of Si-Ti-B doped diamond were studied by using XDA and TEM. AS the sintering temperature increases,Si and Ti react with the carbon on the surface of diamond particle to form SiC and TiC.Si reacts with Ti to form TiSi₂. At temperature of 1500~1600℃, TiSi₂ is decomposed intoTi andSi and then which react with the carbon on the surface of diamond particles to form corresponding carbides, The diamond particles are bonded together by the sintering of carbides between the diamond particles.