硅-钛-硼掺杂金刚石烧结过程的研究

INVESTIGATION OF SINTERING PROCESS OF SILICON-TITANIUM-BORON DOPED DIAMOND

摘要: 采用x射线衍射分析和透射电镜观察,研究了硅-钛-硼掺杂金刚石在烧结过程中各物相的反应。随着烧结温度的升高,硅、钛分别与金刚石表面石墨化的碳反应生成SiC和TiC,硅与钛反应形成TiSi₂。在1500~1600℃,TiSi₂发生分解,新生的硅和钛与金刚石表面剩余的石墨反应生成相应的碳化物。通过金刚石颗粒间的碳化物的烧结,将金刚石粘结起来。
- 硅-钛-硼掺杂 /
- 金刚石 /
- 烧结过程
Abstract: The reactions during sintering of Si-Ti-B doped diamond were studied by using XDA and TEM. AS the sintering temperature increases,Si and Ti react with the carbon on the surface of diamond particle to form SiC and TiC.Si reacts with Ti to form TiSi₂. At temperature of 1500~1600℃, TiSi₂ is decomposed into[Ti] and[Si] and then which react with the carbon on the surface of diamond particles to form corresponding carbides, The diamond particles are bonded together by the sintering of carbides between the diamond particles.
- Si-Ti-B doped /
- sintering process /
- diamond

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