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摘要: B4C是一种重要的工业材料,被广泛应用于零件加工、航空航天、装甲防护和核工业领域。放电等离子烧结是一种通过多场耦合作用来实现材料低温快速烧结的技术。本文综述了近几年来放电等离子烧结制备B4C陶瓷的研究现状,阐述了放电等离子烧结的基本原理和特点,着重分析了不同原料粉末和不同烧结工艺参数对B4C结构和性能的影响,最后对放电等离子烧结B4C陶瓷的发展做出了展望。Abstract: B4C is a critical industrial material, which is widely used in parts processing, aerospace, armor protection, and nuclear industry. Spark plasma sintering (SPS) technology can realize the rapid sintering of materials at low temperature through the multi field coupling. The research status of B4C ceramics sintered by SPS in recent years was reviewed in this paper. The basic principle and characteristics of SPS were expounded. The effects of the raw powders and sintering parameters on the composition and properties of B4C were emphatically analyzed. Finally, the development of B4C ceramics sintered by SPS was prospected.
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Key words:
- spark plasma sintering /
- densification /
- boron carbide /
- composites /
- sintering aids
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图 3 相似放电等离子烧结条件下不同混合方式混合B+C粉末获得的B4C陶瓷典型微观结构[22]:(a)、(d)常规混合;(b)、(e)高能球磨,5 min;(c)、(f)高能球磨,15 min
Figure 3. Typical microstructure of the B4C ceramics obtained from the B+C powders in different mixing methods under the similar SPS conditions[22]: (a), (d) conventional mixing; (b), (e) high energy ball milling (HEBM), 5 min; (c), (f) HEBM, 15 min
表 1 不同放电等离子烧结工艺下样品的相对密度、维氏硬度、断裂韧性及动态韧性[20]
Table 1. Relative density, Vickers hardness, fracture toughness, and dynamic toughness of the samples prepared by the different SPS processes[20]
样品 放电等离子烧结工艺 相对密度 / % 硬度 / GPa 断裂韧性 / (MPa·m1/2) 动态韧性 / (MJ·m‒2) A 1600 ℃/20 min/300 MPa 95.6 27.6±1.8 6.6±0.7 19.3 B 2100 ℃/10 min/50 MPa 97.8 35.3±2.6 3.8±0.4 5.1 表 2 1750 ℃放电等离子烧结B4C‒SiC复合材料相对密度和硬度[40]
Table 2. Relative density and hardness of the spark plasma sintered B4C‒SiC composites at 1750 ℃[40]
试样 相对密度 / % 硬度 / GPa B4C+5%SiC(反应烧结) 97.7 35.0±0.7 B4C+10%SiC(反应烧结) 93.8 34.5±0.7 B4C+15%SiC(反应烧结) 91.2 33.1±0.7 B4C+20%SiC(反应烧结) 88.3 32.1±0.7 B4C+5%SiC 98.0 34.4±0.5 B4C+10%SiC 98.0 33.4±0.3 B4C+15%SiC 97.8 31.1±0.5 B4C+5%SiC+5%Y2O3 98.3 35.3±0.4 B4C+10%SiC+5%Y2O3 98.8 34.4±0.4 B4C+15%SiC+5%Y2O3 98.2 33.0±0.6 -
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