Citation: | WANG Yuelong, WU Haoyang, JIA Baorui, ZHANG Yiming, ZHANG Zhirui, LIU Chang, TIAN Jianjun, QIN Mingli. Research progress on sintering additive used for high thermal conductivity silicon nitride ceramics[J]. Powder Metallurgy Technology, 2024, 42(1): 1-13. doi: 10.19591/j.cnki.cn11-1974/tf.2021070001 |
[1] |
申胜飞, 李茜. 5G通信技术关键材料发展研究. 科技中国, 2019(8): 50
Shen S F, Li Q. Research on the development of key materials for 5G communication technology. Scitech China, 2019(8): 50
|
[2] |
James P. Thermal challenges facing new-generation light-emitting diodes (LEDs) for lighting applications // International Symposium on Optical Science and Technology. Seattle, 2002: 215
|
[3] |
程浩, 陈明祥, 罗小兵, 等. 电子封装陶瓷基板. 现代技术陶瓷, 2019, 40(4): 265
Cheng H, Chen M X, Luo X B, et al. Ceramic substrate for electronic packaging. Adv Ceram, 2019, 40(4): 265
|
[4] |
陆琪, 刘英坤, 乔志壮, 等. 陶瓷基板研究现状及新进展. 半导体技术, 2021, 46(4): 257
Lu Q, Liu Y K, Qiao Z Z, et al. Reserach status and new progress of ceramic substrate. Semicond Technol, 2021, 46(4): 257
|
[5] |
陈寰贝, 王子良, 庞学满, 等. 大功率高可靠电子封装研究发展趋势. 真空电子技术, 2018(4): 8
Chen H B, Wang Z L, Pang X M, et al. Development trend of high power and reliable electronic packaging. Vacuum Electron, 2018(4): 8
|
[6] |
Slack G A, Austerman S B. Thermal conductivity of BeO single crystals. J Appl Phys, 1971, 42(12): 4713 doi: 10.1063/1.1659844
|
[7] |
李少鹏. 新一代IGBT模块用高可靠氮化硅陶瓷覆铜基板研究进展. 电子工业专用设备, 2019(1): 1 doi: 10.3969/j.issn.1004-4507.2019.01.001
Li S P. Research and development of bongding copper to Si3N4 ceramic substrates uesd in IGBT module. Equip Electron Prod Manuf, 2019(1): 1 doi: 10.3969/j.issn.1004-4507.2019.01.001
|
[8] |
IEA. Global EV outloook 2022. IEA(2022-05). https://www.iea.org/reports/global-ev-outlook-2022
|
[9] |
Hardie D, Jack K H. Crystal structures of silicon nitride. Nature, 1957, 180: 332 doi: 10.1038/180332a0
|
[10] |
Riley F L. Silicon nitride and related materials. J Am Ceram Soc, 2000, 83(2): 245 doi: 10.1111/j.1151-2916.2000.tb01182.x
|
[11] |
Haggerty J S, Lightfoot A. Opportunities for enhancing the thermal conductivities of SiC and Si3N4 ceramics through improved processing // Proceedings of the 19th Annual Conference on Composites, Advanced Ceramics, Materials, and Structures—A: Ceramic Engineering and Science Proceedings. Cocoa Beach, 1995: 475
|
[12] |
Hirosaki N, Ogata S, Kocer C, et al. Molecular dynamics calculation of the ideal thermal conductivity of single-crystal α- and β-Si3N4. Phys Rev B, 2002, 65(13): 134110 doi: 10.1103/PhysRevB.65.134110
|
[13] |
Slack G A. Nonmetallic crystals with high thermal conductivity. J Phys Chem Solids, 1973, 34: 321 doi: 10.1016/0022-3697(73)90092-9
|
[14] |
Jack K H, Wilison W I. Ceramics based on the Si−Al−O−N and related systems. Nat Phys Sci, 1972, 238(80): 28 doi: 10.1038/physci238028a0
|
[15] |
Oyama Y. Solid solution in the ternary system, Si3N4−AlN−Al2O3. Jpn J Appl Phys, 1972, 11: 760 doi: 10.1143/JJAP.11.760
|
[16] |
Kusano D, Hyuga H, Zhou Y, et al. Effect of aluminum content on mechanical properties and thermal conductivities of sintered reaction-bonded silicon nitride. Int J Appl Ceram Technol, 2014, 11(3): 534 doi: 10.1111/ijac.12035
|
[17] |
Zhou Y, Zhu X W, Hirao K, et al. Sintered reaction-bonded silicon nitride with high thermal conductivity and high strength. Int J Appl Ceram Technol, 2008, 5(2): 119 doi: 10.1111/j.1744-7402.2008.02187.x
|
[18] |
Uskoković D P, Palmour H, Spriggs R M. Science of Sintering. New York: Plenum Press, 1989
|
[19] |
Tanaka I, Pezzotti G, Okamoto T, et al. Hot isostatic press sintering and properties of silicon nitride without additives. J Am Ceram Soc, 1989, 72(9): 1656 doi: 10.1111/j.1151-2916.1989.tb06298.x
|
[20] |
German R M, Suri P, Park S J. Review: liquid phase sintering. J Mater Sci, 2009, 44: 1 doi: 10.1007/s10853-008-3008-0
|
[21] |
Pezzotti G, Ota K I, Kleebe H J. Grain-boundary relaxation in high-purity silicon nitride. J Am Ceram Soc, 1996, 79(9): 2237 doi: 10.1111/j.1151-2916.1996.tb08968.x
|
[22] |
Wang C M, Ruhle M, Riley F L, et al. Silicon nitride crystal structure and observations of lattice defects. J Mater Sci, 1996, 31: 5281 doi: 10.1007/BF01159294
|
[23] |
Okamoto Y, Hirosaki N, Ando M, et al. Effect of sintering additive composition on the thermal conductivity of silicon nitride. J Mater Res, 1998, 13(12): 3473 doi: 10.1557/JMR.1998.0474
|
[24] |
Brinker C J, Haaland D M, Loehman R E. Oxynitride glasses prepared from gels and melts. J Non-Cryst Solids, 1983, 56: 179 doi: 10.1016/0022-3093(83)90465-9
|
[25] |
Negita K. Effective sintering aids for Si3N4 ceramics. J Mater Sci Lett, 1985, 4: 755 doi: 10.1007/BF00726981
|
[26] |
Negita K. Ionic radii and electronegativities of effective sintering aids for Si3N4 ceramics. J Mater Sci Lett, 1985, 4: 417 doi: 10.1007/BF00719733
|
[27] |
Lange F F. Phase relations in the system Si3N4−SiO2−MgO and their interrelation with strength and oxidation. J Am Ceram Soc, 1977, 61(1-2): 53
|
[28] |
Yeheskel O, Gefen Y, Talianker M. Hot isostatic pressing of Si3N4 with Y2O3 additions. J Mater Sci, 1984, 19: 745 doi: 10.1007/BF00540444
|
[29] |
Kitayama M, Hirao K, Watari K, et al. Thermal conductivity of β-Si3N4: III, effect of rare-earth (RE=La, Nd, Gd, Y, Yb, and Sc) oxide additives. J Am Ceram Soc, 2001, 84(2): 353 doi: 10.1111/j.1151-2916.2001.tb00662.x
|
[30] |
Kitayama M, Hirao K, Kanzaki S. Effect of rare earth oxide additives on the phase transformation rates of Si3N4. J Am Ceram Soc, 2006, 89(8): 2612 doi: 10.1111/j.1551-2916.2006.01106.x
|
[31] |
Satet R L, Hoffmann M J. Grain growth anisotropy of β-silicon nitride in rare-earth doped oxynitride glasses. J Eur Ceram Soc, 2004, 24(12): 3437 doi: 10.1016/j.jeurceramsoc.2003.10.034
|
[32] |
Kitayama M, Hirao K, Toriyama M, et al. Thermal conductivity of β-Si3N4: I, effects of various microstructural factors. J Am Ceram Soc, 1999, 82(11): 3105 doi: 10.1111/j.1151-2916.1999.tb02209.x
|
[33] |
Kitayama M, Hirao K, Tsuge A, et al. Thermal conductivity of β-Si3N4: II, effect of lattice oxygen. J Am Ceram Soc, 2000, 83(8): 1985 doi: 10.1111/j.1151-2916.2000.tb01501.x
|
[34] |
Kitayama M, Hirao K, Tsuge A, et al. Oxygen content in β-Si3N4 crystal lattice. J Am Ceram Soc, 1999, 82(11): 3263 doi: 10.1111/j.1151-2916.1999.tb02238.x
|
[35] |
Wang C M, Pan X Q, Hoffmann M J, et al. Grain boundary films in rare-earth-glass-based silicon nitride. J Am Ceram Soc, 1996, 79(3): 788 doi: 10.1111/j.1151-2916.1996.tb07946.x
|
[36] |
Liu W, Tong W X, Lu X X, et al. Effects of different types of rare earth oxide additives on the properties of silicon nitride ceramic substrates. Ceram Int, 2019, 45(9): 12436 doi: 10.1016/j.ceramint.2019.03.176
|
[37] |
Hirosaski N, Okada A, Matoba K. Sintering of Si3N4 with the addition of rare-earth oxides. J Am Ceram Soc, 1988, 71(3): 144
|
[38] |
Kubaschewski O, Alock C B. Metallurgical Thermochemistry. 5th ed. London: Pergamon, 1979
|
[39] |
Oyama Y, Kamigaito O. A study on the sintered Si3N4−MgO system. J Ceram Soc Jpn, 1973, 81(7): 290
|
[40] |
Gauckler L J, Lukas H L, Tien T Y. Crystal chemistry of β-Si3N4 solid solutions containing metal oxides. Mater Res Bull, 1976, 11: 503 doi: 10.1016/0025-5408(76)90231-2
|
[41] |
Tsuge A, Kudo H, Komeya K. Reaction of Si3N4 and Y2O3 in hot-pressing. J Am Ceram Soc, 1974, 57(6): 269
|
[42] |
Lin Y B, Ning X S, Zhou H P, et al. Study on the thermal conductivity of silicon nitride ceramics with magnesia and yttria as sintering additives. Mater Lett, 2002, 57: 15 doi: 10.1016/S0167-577X(02)00690-0
|
[43] |
Go S I, Li Y S, Ko J W, et al. Microstructure and thermal conductivity of sintered reaction-bonded silicon nitride: the particle size effects of MgO additive. Adv Mater Sci Eng, 2018, 2018: 4263497
|
[44] |
Liu W, Tong W X, He R X, et al. Effect of the Y2O3 additive concentration on the properties of a silicon nitride ceramic substrate. Ceram Int, 2016, 42(16): 18641 doi: 10.1016/j.ceramint.2016.09.001
|
[45] |
Zhou Y, Hyuga H, Kusano D, et al. Effects of yttria and magnesia on densification and thermal conductivity of sintered reaction-bonded silicon nitrides. J Am Ceram Soc, 2019, 102(4): 1579 doi: 10.1111/jace.16015
|
[46] |
Zhou Y, Hyuga H, Kusano D, et al. A tough silicon nitride ceramic with high thermal conductivity. Adv Mater, 2011, 23(39): 4563 doi: 10.1002/adma.201102462
|
[47] |
Hayashi H, Hirao K, Toriyama M, et al. MgSiN2 addition as a means of increasing the thermal conductivity of β-silicon nitride. J Am Ceram Soc, 2001, 84(12): 3060 doi: 10.1111/j.1151-2916.2001.tb01141.x
|
[48] |
Lee H M, Lee E B, Kim D L, et al. Comparative study of oxide and non-oxide additives in high thermal conductive and high strength Si3N4 ceramics. Ceram Int, 2016, 42(15): 17466 doi: 10.1016/j.ceramint.2016.08.051
|
[49] |
Zhang J, Cui W, Li F, et al. Effects of MgSiN2 addition and post-annealing on mechanical and thermal properties of Si3N4 ceramics. Ceram Int, 2020, 46(10): 15719 doi: 10.1016/j.ceramint.2020.03.097
|
[50] |
Jiang G J, Xu J Y, Shen H, et al. Fabrication of silicon nitride ceramics with magnesium silicon nitride and yttrium oxide as sintering additives. Adv Mater Res, 2010, 177: 235 doi: 10.4028/www.scientific.net/AMR.177.235
|
[51] |
Zhu X W, Hayashi H, Zhou Y, et al. Influence of additive composition on thermal and mechanical properties of β–Si3N4 ceramics. J Mater Res, 2004, 19(11): 3270 doi: 10.1557/JMR.2004.0416
|
[52] |
Wang W D, Yao D X, Liang H Q, et al. Effect of in-situ formed Y2O3 by metal hydride reduction reaction on thermal conductivity of β-Si3N4 ceramics. J Eur Ceram Soc, 2020, 40(15): 5316 doi: 10.1016/j.jeurceramsoc.2020.06.005
|
[53] |
Wang W D, Yao D X, Liang H Q, et al. Improved thermal conductivity of β-Si3N4 ceramics by lowering SiO2/Y2O3 ratio using YH2 as sintering additive. J Am Ceram Soc, 2020, 103(10): 5567 doi: 10.1111/jace.17271
|
[54] |
Wang W D, Yao D X, Liang H Q, et al. Improved thermal conductivity of β-Si3N4 ceramics through the modification of the liquid phase by using GdH2 as a sintering additive. Ceram Int, 2021, 47(4): 5631 doi: 10.1016/j.ceramint.2020.10.148
|
[55] |
王为得, 陈寰贝, 李世帅, 等. 以YbH2-MgO体系为烧结助剂制备高热导率高强度氮化硅陶瓷. 无机材料学报, 2021, 36(9): 959 doi: 10.15541/jim20200705
Wang W D, Chen H B, Li S S, et al. Preparation of silicon nitride with high thermal conductivity and high flexural strength using YbH2-MgO as sintering additive. J Inorg Mater, 2021, 36(9): 959 doi: 10.15541/jim20200705
|
[56] |
Liang H Q, Wang W D, Zuo K H, et al. Effect of LaB6 addition on mechanical properties and thermal conductivity of silicon nitride ceramics. Ceram Int, 2020, 46(11): 17776 doi: 10.1016/j.ceramint.2020.04.083
|
[57] |
Bing B, Fu T, Ning X S. Thermal conductivity and mechanical property of Si3N4 ceramics sintered with CeF3/LaF3 additives. Adv Mater Res, 2010, 105-106: 171 doi: 10.4028/www.scientific.net/AMR.105-106.171
|
[58] |
Li Y S, Kim H N, Wu H B, et al. Enhanced thermal conductivity in Si3N4 ceramic with the addition of Y2Si4N6C. J Am Ceram Soc, 2018, 101(9): 4128 doi: 10.1111/jace.15544
|
[59] |
Qin M L, Lu H F, Wu H Y, et al. Powder injection molding of complex-shaped aluminium nitride ceramic with high thermal conductivity. J Eur Ceram Soc, 2019, 39(4): 952 doi: 10.1016/j.jeurceramsoc.2018.11.037
|
[60] |
Kurokawa Y, Utsumi K, Takamizawa H. Development and microstructural characterization of high-thermal-conductivity aluminum nitride ceramics. J Am Ceram Soc, 1988, 71(7): 588 doi: 10.1111/j.1151-2916.1988.tb05924.x
|
[61] |
He Y Q, Li X Y, Zhang J X, et al. Method for fabricating microwave absorption ceramics with high thermal conductivity. J Eur Ceram Soc, 2018, 38(2): 501 doi: 10.1016/j.jeurceramsoc.2017.09.042
|
[62] |
Li Y S, Kim H N, Wu H B, et al. Improved thermal conductivity of sintered reaction-bonded silicon nitride using a BN/graphite powder bed. J Eur Ceram Soc, 2017, 37(15): 4483 doi: 10.1016/j.jeurceramsoc.2017.05.045
|
[63] |
Hu F, Zhu T B, Xie Z P, et al. Elimination of grain boundaries and its effect on the properties of silicon nitride ceramics. Ceram Int, 2020, 46(8): 12606 doi: 10.1016/j.ceramint.2020.02.024
|
[64] |
Li Y S, Kim H N, Wu H B, et al. Enhanced thermal conductivity in Si3N4 ceramic by addition of a small amount of carbon. J Eur Ceram Soc, 2019, 39(2-3): 157 doi: 10.1016/j.jeurceramsoc.2018.10.006
|
[65] |
Dow H S, Kim W S, Lee J W. Thermal and electrical properties of silicon nitride substrates. AIP Adv, 2017, 7(9): 095022 doi: 10.1063/1.4996314
|